Novel hybrid structures for new-age resistive memory-logic devices

Non-volatile memory defines today’s digital era.

Conventional memory scaling is at its physical limit and we need an ‘equivalent scaling’ i.e., functionalization using new materials with enhanced properties.

Resistance random access memory (RRAM) elements are front runners in this context due to their simple structure and good compatibility with CMOS technology. Still, their mass production has suffered due to fluctuations, failure mechanism and reliability issues.

Now breakthroughs are needed at the level of materials.Here, we propose to design new material combinations (composites of perovskite oxides and 2D materials) for resistive switching (RS).

Incorporating 2D materials into an oxide matrix will give better functionality via multiphase spacers with well controlled electrical properties. We will use pulsed laser deposition and e-beam lithography for film growth and device fabrication.

Detailed optimizations, structural/morphological characterization via diffraction, reflectivity and microscopy tools will give new knowledge on growth. Electrical/magnetotransport measurements will quantify the RS capacity.

The magnetic behaviour can offer new possibilities for memory devices like giant magnetoresistance, enhanced Curie temperature, and will be studied using magnetometry and microscopic probes like neutrons. This 4-yr project builds on the applicants’ unique strengths and has high feasibility. It will lead to a new path for inventing highly efficient new-age RRAM elements.