Empowering 3D graphene-on-SiC sensors utilizing X-ray based facilities at Max IV Lab Lund

Purpose and goal:

The purpose of the project was to use microfabrication techniques to thin SiC cavities before epitaxial growth of graphene and evaluate the quality of the graphene at the side walls of a SiC cavity to enable the use of graphene beyond flat surfaces. While the consortium managed to thin SiC cavities, grow graphene, and characterize graphene at the side walls, the graphene at the side walls wasn’t of sufficient quality to enable sensing applications.

There’s a need to continue the R&D work of thinning SiC cavities and optimize graphene growth to achieve graphene of sufficient quality. Expected results and effects:

Through this project, Graphensic could validate the growth process yields the highest quality graphene also on thin SiC substrates but not yet on vertical side walls of SiC required for manufacturing of 3-axis Hall sensors. The connection between RISE and Graphensic has been consolidated, and RISE has now a microfabrication process that can be relevant for future commercial applications of graphene.

Approach and implementation:

The consortium included three partners Graphensic AB, for high-quality graphene growth; RISE, for SiC microfabrication (deep etching); and Lund University, for surface characterization and expertise at the Max IV Laboratory). The workflow is such that RISE carried out the microfabrication of SiC, Graphensic grows the material on SiC membranes and send them to RISE for device fabrication and characterization at MAX IV through XPS and NEXAFS measurements.

Project start delays propagated, and we still wait for MAX IV complete analysis for future development.