Filling the wavelength gaps for semiconductor lasers by novel bismide

Semiconductor laser diodes (LDs) have revolutionized information and communication technology and plays a pivotal role in many applications due to its compactness, low cost and high efficiency.

With clear originality and innovation, the overall goals of this project are to realize high quality novel dilute bismide (III-V-Bi) heterostructures using molecular beam epitaxy and demonstrate semiconductor LDs at 550-650 nm and 2.8-4 µm, thus filling the two technologically important wavelength gaps in green-yellow and mid-infrared spectral regimes.

Theoretical simulations will be carried out to understand electronic properties of novel bismides and to design laser structures for the wavelengths of interest.

Epitaxy and comprehensive material characterizations will be performed to optimize growth conditions and material quality, and eventually LDs will be processed and demonstrated.

The project will be implemented at Chalmers University of Technology housing state-of-the-art cleanroom facilities required for the project in four years.

The applicant has long experiences on epitaxy of heterostructures and fabrication of semiconductors LDs, and is internationally well recognized in the dilute bismide research and MBE community.

Success of the project will greatly advance the 3rd generation semiconductor technology for illumination and high sensitivity gas sensor technology in health and environmental applications, both indispensable for the sustainable development of society.