Surfaces of semiconductor nanostructures: Characterization under relevant device conditions

Semiconductor nanostructures are highly promising for a variety of applications within electronics, optics, photovoltaics, and quantum information.

The device performance is often determined by surface effects, so that atomic-scale surface characterization is crucial for understanding and improving devices.

However, there is a gap between characterization of simplified model surfaces and operation of complex devices in realistic environments.Here, we will characterize surfaces and interfaces of technologically relevant nanostructures under conditions that are realistic for device operation, down to the atomic scale.

We aim to explore novel surface properties of complex heterostructures, reveal surface reactions during nanostructure functionalization, and understand the local interplay between electronic surface structure and device operation.

For this goal, we use a toolbox of specialized surface characterization techniques based on scanning tunneling microscopy and synchrotron X-ray methods.We expect to solve material challenges that are critical for future devices such as nanowire tunnel transistors, ferroelectric thin films on III-V nanostructure neuromorphic networks, nanowire solar cells, or bismuth-based nanostructures with non-trivial topological behavior at room temperature.

We are collaborating with worldwide leading experts in semiconductor growth and device development, ensuring access to highly relevant nanostructures and quick implementation of our results.