MakIng New ElectRonic deVices from Amorphous materials

MINERVA aims to grow novel amorphous boron nitride (aBN) thin films over a large area on various substrates, and evaluate their properties as coatings for thermal, electronic, and spintronic applications.

It focuses nanoscale control of the amorphicity, thickness of the films as well as doping rate, and substrate interaction.

The link between processing and atomic structure will be studied by an appropriate combination of analytical techniques.

Theoretical modelling to understand the structures and properties of the materials will support and validate the experiments at every stage.

The expected physical properties of such deposited layers, coupled with the versatility and adaptability in materials processing, as well as the large area and uniform coverage at low temperature, will allow their integration as electronic components in ultimate nanoelectronic systems.

Specifically, the value of large-scale aBN for resistive switching devices, magnetic tunnel junctions, and spin injection tunnel barriers will be studied.

The electronic properties of aBN with ferromagnetic electrodes will be explored to predict the potential of spin manipulation by proximity effect at the hybridized aBN/ferromagnet interface. It is expected to generate new scientific knowledge of charge and spin transport across novel 2D hybrid junctions.

MINERVA joins complementary expertise and a high-level interaction between partners to bring new materials and technological devices to the Flagship consortium.