E!2667 EuroGaIn, European GaN and InP Semiconductor for 100-GHz+, Gotmic AB

Purpose and goal:

We will bring to the market semiconductor products based on new InP and GaN technology enabling the exploitation of frequency bands beyond 100 GHz (W-band and D-band) for telecom, sensing, and security applications. In the 100 GHz+ frequency range, RF transmitters (Tx) and receivers (Rx) based on conventional IC technologies, such as GaAs and Si, have inherently limited performance in terms of output power and noise level.

Our proposed solution overcomes these performance limitations and can be offered to the market at a competitive price level. Expected results and effects:

The project will result in two separate semiconductor manufacturing processes based on InP and GaN high-electron mobility transistors (HEMTs). These processes are both needed to enable the realization of monolithic microwave integrated circuits (MMICs) targeting the new W-band (92-100 GHz / 102-114 GHz) and D-band (110-170 GHz) segments of the mm-wave telecom market.

Approach and implementation: Work Packages: WP1. Management WP2. InP HEMT High-Frequency Optimization WP3. InP IC Technology WP4. GaN HEMT High-Frequency Optimization WP5. GaN IC Technology WP6. Communication, Dissemination, and Exploitation