Framsteg inom halvledartillverkning: Genomförbarhetsstudie för att minska linjekantojämnheter vid mönstring

Purpose and goal:

This project was aimed to investigate the feasibility of improving LER and LWR of patterned features in semiconductor nanofabrication. The outcome was a successful proof of concept that lab observations can be used in nanofabrication. This method represents a promising novel technology for improving LER in electronic component fabrication with nanoscale features, and the results represent a significant step forward in the field of advanced node nanostructured fabrication.

Expected results and effects:

We have successfully demonstrated improvement in LER of Si nanostructures fabricated using EBL by the application of atomic layer etching. We are now working on the optimization of the process for further improvement in LER and have identified potential application areas for our process. We have explored the opportunities for business for AlixLabs in well-known semiconductor fabrication industry. The outcome was a patent for AlxiALsb and submission to represent in a scientific conference.

Approach and implementation:

Each technology node results in smaller semiconductor features; however, LERs are not reducing in the same proportion, as this is inherent to the lithography process. We designed Si patterns with different sizes and showed significant improvement in LER and LWR. However, further research is needed to optimize the process and ensure its scalability and reproducibility.

The result of this project is promising, and implementation in semiconductor fabrication can help in the realization of new advanced technology nodes.