Atomic level interfacial engineering of perovskites for optoelectronics

The purpose of this project is to control interfacial physics in order to develop optoelectronic device structures.

To fundamentally engineer such devices, one needs well-defined materials and interfaces having properties that can be tailored, as well as methodologies to investigate the interfacial electronic structure, preferably at the atomic level.The proposed work  builds on current advances in the application of X-ray based spectroscopic tools, developed by the PI both at large-scale facilities and  in the home lab.

An important part of this work includes the implementation of a new operando hard X-ray photoelectron spectroscopy instrument for measuring electric field distributions and material mixing within thin film structures for optoelectronic device structure. It also includes a range of different x-ray tools to follow charge dynamics of excited states.

By implementation of the new X-ray-based spectroscopic methodology the project will give atomic level insights in (i) band and bandgap engineering (ii) interfacial energy matching (iii) charge transfer and ion movement for functional systems.

In this way the research extends beyond our current understanding in semiconductor optoelectronics.The project seek support for personnel (PhD, Researcher) to fundamentally understand and design the functional interfaces with potential in optoelectronic applications.