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Active STUDENTSHIP UKRI Gateway to Research

Scaling ULTRARAM


Funder Engineering and Physical Sciences Research Council
Recipient Organization Lancaster University
Country United Kingdom
Start Date Sep 30, 2024
End Date Mar 30, 2028
Duration 1,277 days
Number of Grantees 2
Roles Student; Supervisor
Data Source UKRI Gateway to Research
Grant ID 2935430
Grant Description

ULTRARA is a world-leading innovation in memory technology underpinned by two granted patents with others pending. Through use of the quantum-mechanical effect of resonant tunnelling, ULTRARAM uniquely combines the non-volatility of flash with the performance (speed and endurance) of DRAM, something previously considered unachievable. At 20-nm node the 0/1 switching energy of ULTRARAM is 100x lower than DRAM, 1,000x lower than flash and more than 10,000x lower than other 'emerging memories', making it ultra-efficient.

ULTRARAM has an endurance of more than107, a retention more than 1,000-years and can operate up to at least 100 degree celsius without loss of data. It is very attractive for specialist applications where energy efficiency is of paramount importance, e.g., space, but also highly beneficial in computing applications from IoT through to data centres. The objective is to compete with DRAM, which has a market size of aprrox $100bn per year.

However, previous devices were processed by chemically selective 'wet' etching. This is fine for very precisely (selectively) etching to specific layers when making large (micro meters-scale) devices, but it is not suitable for nm-scale devices, as wet etching is isotropic, and will laterally etch tiny devices away. We have now developed an entirely new fabrication process that uses 'dry' etching (ion bombardment).

This etches vertically but not laterally, so is suitable for nm-scale devices and compatible with standard processes in semiconductor chip 'fabs'. The PhD project will take the new dry-etch process, developed using optical lithography at similar 10-micro meters node, and apply it to electron-beam lithography to produce and test nanoscale ULTRARAM devices and arrays in the QTC cleanroom.

This Moore's-Law-like scaling of ULTRARAM is essential for its technological development and commercialisation.

The student will work very closely with the industrial partner, Quinas Technology, a multi-international-award-winning spinout from Lancaster University. There will be regular meetings (at least monthly), and the student will be invited to attend company events, such as industrially-oriented conferences, trade shows and exhibitions. The student will also have the opportunity to work with the company's overseas partners.

All Grantees

Lancaster University

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