Single-atom quantum phenomena in nanoscale semiconductor devices

Incremental advances in semiconductor technology of the past decades led to unprecedented miniaturization of optoelectronic integrated circuits, which now use billions of transistors, each containing only hundreds of atoms. However, these most sophisticated devices still rely on collective phenomena such as electric currents and light beams. These classical concepts are limited by atomic-scale effects and allow no further progress through miniaturization.

Overcoming this bottleneck, would require a new generation of devices where atomic scale effects are no longer an obstacle but are used as a resource to build circuits through precise placement of individual atoms while exploiting quantum effects to boost information storage and processing capacity.

Recent innovations in semiconductor material science and technology offer new routes to atomic scale miniaturisation. This project relies on a new type of semiconductor quantum dots, which are tiny semiconductor crystals consisting of only a few thousand atoms. A comprehensive program of material development and experimental physics studies will seek to demonstrate quantum information storage and processing with nuclear magnetic states of individual atoms incorporated into a quantum dot.

The broad goal of this proposal is to understand fundamental phenomena and develop material technologies that will stimulate and guide the transition from existing classical digital chips to future devices, which will eventually use every individual atom of a semiconductor crystal as a resource to build integrated circuits with Avogadro-scale number of elementary units and unprecedented information processing power and energy efficiency.