Graphene reinforced Power Electronic Module

Utilizing the possibility of downsizing the new SiC MOSFETs for miniaturization, poses temperature stress issues that challenge performance and lifetime [1-2]. This study focuses on showcasing the potential for enhancing heat conduction within a SiC power module.

Graphene assembled films, known for high thermal conductivity, surpassing conventional metals like copper, are proposed for use in the module's packaging, leading to that the powertrain effectiveness can be raised. The cooling system can be scaled down, and the total power density increased. Initial analysis suggests a potential 10°C reduction in SiC MOSFET junction temperature using the graphene layer.

This prompts a comprehensive investigation.

The project entails constructing thermal verification setups, employing simulations, experimental research, and additive manufacturing for prototype power modules conducting by RISE. While RISE/Chalmers will quantify the temperature impacts resulting from graphene integration.